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Texas Instruments CSD17313Q2Q1

Texas Instruments



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$ 1.36

4133 4133 Items In Stock

Specification of CSD17313Q2Q1

Series CSD17313Q2Q1
Pd - Power Dissipation 2.3 W
Minimum Operating Temperature - 55 C
Tradename NexFET
Vgs th - Gate-Source Threshold Voltage 1.3 V
Id - Continuous Drain Current 5 A
Mounting Style SMD/SMT
Alternate Part No. 595-CSD17313Q2Q1
Packaging Reel
Manufacturer Part No. CSD17313Q2Q1
Manufacturer Texas Instruments
Typical Turn-Off Delay Time 4.2 ns
Rise Time 3.9 ns
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Breakdown Voltage 10 V
Package/Case WSON-6 FET
Qg - Gate Charge 2.1 nC
Fall Time 1.3 ns
Configuration Single
Vds - Drain-Source Breakdown Voltage 30 V
Transistor Polarity N-Channel
Forward Transconductance - Min 16 S
Product Category MOSFET
Brand Texas Instruments
Rds On - Drain-Source Resistance 32 mOhms

More info

Apr 24, 2014 - As a member of my.TI you can join the TI E2E™ Community where you can ask questions, share ideas and collaborate with fellow engineers ... [1]

Download a datasheet or document on TIs CSD17313Q2Q1 Power MOSFET, from the N-Channel MOSFET Transistor ... CSD17313Q2Q1. 30 ... FETs from TI ... [2]