Texas Instruments CSD19531Q5AT View larger

Texas Instruments CSD19531Q5AT

Texas Instruments

CSD19531Q5AT


MOSFET 100V,5.3mOhm,NexFET Power MOSFET

$ 6.09

157 157 Items In Stock

Specification of CSD19531Q5AT

Pd - Power Dissipation 3.3 W
Qg - Gate Charge 37 nC
Vgs th - Gate-Source Threshold Voltage 2.7 V
Series CSD19531Q5A
Transistor Polarity N-Channel
Alternate Part No. 595-CSD19531Q5AT
Vgs - Gate-Source Breakdown Voltage 20 V
Mounting Style SMD/SMT
Brand Texas Instruments
Packaging Reel
Rds On - Drain-Source Resistance 6 mOhms
Manufacturer Texas Instruments
Typical Turn-Off Delay Time 18.4 ns
Manufacturer Part No. CSD19531Q5AT
Channel Mode Enhancement
Package/Case VSON-8 FET
Vds - Drain-Source Breakdown Voltage 100 V
Fall Time 5.2 ns
Maximum Operating Temperature + 150 C
Tradename NexFET
Configuration Single
Forward Transconductance - Min 82 S
Product Category MOSFET
Id - Continuous Drain Current 110 A
Rise Time 5.8 ns
Minimum Operating Temperature - 55 C